SVD50N06MJ Specs and Replacement
Type Designator: SVD50N06MJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 86.67 nS
Cossⓘ - Output Capacitance: 393.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO251J
SVD50N06MJ substitution
- MOSFET ⓘ Cross-Reference Search
SVD50N06MJ datasheet
svd50n06t svd50n06d svd50n06m svd50n06mj.pdf
SVD50N06T/D/M/MJ 50A 60V N 2 SVD50N06T/D/M/MJ N MOS VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒
Detailed specifications: HD2310, HD2312, SVD3205F, SVD3205S, SVD501DEAG, SVD50N06T, SVD50N06D, SVD50N06M, IRF730, SVD540T, SVD540D, SVD540K, SVD640T, SVD640D, SVD640F, SVD9Z24NT, SVDZ24NT
Keywords - SVD50N06MJ MOSFET specs
SVD50N06MJ cross reference
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SVD50N06MJ replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1507 | R6004ENX | SVF10N65F | HM4407A | AOTF8T50P | 2SK2633LS | JMSH0602AGQ
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