SVD640T MOSFET. Datasheet pdf. Equivalent
Type Designator: SVD640T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
SVD640T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVD640T Datasheet (PDF)
..1. Size:539K silan
svd640t svd640d svd640f.pdf
svd640t svd640d svd640f.pdf
SVD640T/D/F 18A200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC
..2. Size:442K silan
svd640t svd640d svd640dtr svd640s svd640str.pdf
svd640t svd640d svd640dtr svd640s svd640str.pdf
SVD640T/D/S 18A200V N 2SVD640T/D/S N MOS S-RinTM VDMOS .13. 1. 2. 3.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
