SVD640D Specs and Replacement
Type Designator: SVD640D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO252
SVD640D substitution
- MOSFET ⓘ Cross-Reference Search
SVD640D datasheet
svd640t svd640d svd640f.pdf
SVD640T/D/F 18A 200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC ... See More ⇒
Detailed specifications: SVD50N06T, SVD50N06D, SVD50N06M, SVD50N06MJ, SVD540T, SVD540D, SVD540K, SVD640T, 20N60, SVD640F, SVD9Z24NT, SVDZ24NT, SVF10N60T, SVF10N60F, SVF10N60S, SVF10N60K, SVF10N80F
Keywords - SVD640D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: TSP5N60M | APT5024SFLLG
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