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SVD640D Specs and Replacement

Type Designator: SVD640D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO252

SVD640D substitution

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SVD640D datasheet

 ..1. Size:539K  silan
svd640t svd640d svd640f.pdf pdf_icon

SVD640D

SVD640T/D/F 18A 200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC ... See More ⇒

Detailed specifications: SVD50N06T, SVD50N06D, SVD50N06M, SVD50N06MJ, SVD540T, SVD540D, SVD540K, SVD640T, 20N60, SVD640F, SVD9Z24NT, SVDZ24NT, SVF10N60T, SVF10N60F, SVF10N60S, SVF10N60K, SVF10N80F

Keywords - SVD640D MOSFET specs

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