SVF12N65CKL Datasheet and Replacement
Type Designator: SVF12N65CKL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 209 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46.4 nS
Cossⓘ - Output Capacitance: 156 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO262L
SVF12N65CKL substitution
SVF12N65CKL Datasheet (PDF)
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf
SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A
svf12n65f svf12n65t.pdf
SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf12n65f svf12n65k svf12n65s svf12n65str.pdf
SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
svf12n65t svf12n65f.pdf
SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3
Datasheet: SVF10N80K , SVF12N60T , SVF12N60F , SVF12N60S , SVF12N60K , SVF12N65CF , SVF12N65CK , SVF12N65CS , IRFP250N , SVF12N65CFQ , SVF13N50T , SVF13N50F , SVF13N50PN , SVF14N65CFJ , SVF18N50F , SVF18N50T , SVF18N50PN .
History: IXFK20N120 | SPP03N60C3 | IRHMJ57260SE | CJQ4406 | TSM2312CX | 2N7002NXBK | RQK0605JGDQA
Keywords - SVF12N65CKL MOSFET datasheet
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History: IXFK20N120 | SPP03N60C3 | IRHMJ57260SE | CJQ4406 | TSM2312CX | 2N7002NXBK | RQK0605JGDQA
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