SVF12N65CFQ MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF12N65CFQ
   Marking Code: 12N65CFQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32.5 nC
   trⓘ - Rise Time: 46.4 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220FQ

SVF12N65CFQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF12N65CFQ Datasheet (PDF)

..1. Size:489K silan
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf

SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A

6.1. Size:586K 1
svf12n65f svf12n65t.pdf

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

6.2. Size:394K silan
svf12n65f svf12n65k svf12n65s svf12n65str.pdf