SVF1N60AM Specs and Replacement

Type Designator: SVF1N60AM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.9 nS

Cossⓘ - Output Capacitance: 23.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.1 Ohm

Package: TO251D

SVF1N60AM substitution

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SVF1N60AM datasheet

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SVF1N60AM

SVF1N60AM/MJ/B/D/F/H 1A 600V N 2 1 2 3 SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 1 1 3 2 3 ... See More ⇒

 7.1. Size:606K  silan
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SVF1N60AM

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Detailed specifications: SVF14N65CFJ, SVF18N50F, SVF18N50T, SVF18N50PN, SVF18N50FJ, SVF18N65F, SVF18N65T, SVF18N65PN, IRF4905, SVF1N60AMJ, SVF1N60AB, SVF1N60AD, SVF1N60AF, SVF1N60AH, SVF1N60M, SVF1N60MJ, SVF1N60N

Keywords - SVF1N60AM MOSFET specs

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