SVF1N60MJ Specs and Replacement

Type Designator: SVF1N60MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.27 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO251J

SVF1N60MJ substitution

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SVF1N60MJ datasheet

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SVF1N60MJ

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SVF1N60MJ

SVF1N60AM/MJ/B/D/F/H 1A 600V N 2 1 2 3 SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 1 1 3 2 3 ... See More ⇒

Detailed specifications: SVF18N65PN, SVF1N60AM, SVF1N60AMJ, SVF1N60AB, SVF1N60AD, SVF1N60AF, SVF1N60AH, SVF1N60M, SKD502T, SVF1N60N, SVF1N60B, SVF1N60D, SVF20N60F, SVF20N60PN, SVF23N50PN, SVF2N60CN, SVF2N60CNF

Keywords - SVF1N60MJ MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs