SVF2N60CD Specs and Replacement

Type Designator: SVF2N60CD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO252

SVF2N60CD substitution

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SVF2N60CD datasheet

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SVF2N60CD

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SVF2N60CD

SVF2N60CN/M/F 2A 600V N 2 SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 3 1. 2. 3... See More ⇒

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SVF2N60CD

SVF2N60M(MJ)(NF)(F)(D) 2A 600V N 2 SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 1 2 3 3 TO-126F-3L ... See More ⇒

 7.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N60CD

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Detailed specifications: SVF20N60F, SVF20N60PN, SVF23N50PN, SVF2N60CN, SVF2N60CNF, SVF2N60CM, SVF2N60CMJ, SVF2N60CF, AON7506, SVF2N60MJ, SVF2N60N, SVF2N60NF, SVF2N60RD, SVF2N60RM, SVF2N60RMJ, SVF2N65N, SVF2N65MJ

Keywords - SVF2N60CD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs