All MOSFET. SVF2N65D Datasheet

 

SVF2N65D Datasheet and Replacement


   Type Designator: SVF2N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 34.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
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SVF2N65D Datasheet (PDF)

 ..1. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf pdf_icon

SVF2N65D

SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

 7.1. Size:542K  silan
 svf2n65f.pdf pdf_icon

SVF2N65D

SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 8.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N65D

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 8.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N65D

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: NCEP01T13AD | ELM13401CA | 12N65KG-TF1-T | NCE0115K | R5016ANJ | DH150N12B | BSB280N15NZ3G

Keywords - SVF2N65D MOSFET datasheet

 SVF2N65D cross reference
 SVF2N65D equivalent finder
 SVF2N65D lookup
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