All MOSFET. TSM1N60LCH Datasheet

 

TSM1N60LCH Datasheet and Replacement


   Type Designator: TSM1N60LCH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-251
 

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TSM1N60LCH Datasheet (PDF)

 ..1. Size:303K  taiwansemi
 tsm1n60lch tsm1n60lcp.pdf pdf_icon

TSM1N60LCH

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

 6.1. Size:403K  taiwansemi
 tsm1n60l a07.pdf pdf_icon

TSM1N60LCH

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

 7.1. Size:368K  taiwansemi
 tsm1n60s a07.pdf pdf_icon

TSM1N60LCH

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 7.2. Size:366K  taiwansemi
 tsm1n60sct.pdf pdf_icon

TSM1N60LCH

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

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Datasheet: SVF2N70M , SVF2N70MJ , SVF2N70F , SVF2N70D , SVF2N70NF , TSM1N45CW , TSM1N45DCS , TSM1N50CT , IRFB31N20D , TSM1N60LCP , TSM1N60SCT , TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT .

History: AFN04N60T220FT | SI4472DY

Keywords - TSM1N60LCH MOSFET datasheet

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