TSM1N80CW
MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM1N80CW
Marking Code: 01N80*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 0.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 21.6
Ohm
Package:
SOT-223
TSM1N80CW
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM1N80CW
Datasheet (PDF)
..1. Size:289K taiwansemi
tsm1n80cw tsm1n80sct.pdf 
TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with
9.1. Size:124K taiwansemi
tsm1nb60sct.pdf
TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per
9.2. Size:124K taiwansemi
tsm1n45dcs.pdf
Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process
9.3. Size:368K taiwansemi
tsm1n60s a07.pdf
TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand
9.4. Size:185K taiwansemi
tsm1nb60ch tsm1nb60cp tsm1nb60cw.pdf
TSM1NB60 600V N-Channel Power MOSFET TO-251 TO-252 SOT-223 PRODUCT SUMMARY Pin Definition: (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, p
9.5. Size:403K taiwansemi
tsm1n60l a07.pdf
TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs
9.6. Size:463K taiwansemi
tsm1n45ct tsm1n45cw.pdf
TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize
9.8. Size:303K taiwansemi
tsm1n60lch tsm1n60lcp.pdf
TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit
9.9. Size:366K taiwansemi
tsm1n60sct.pdf
TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand
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