TSM2N7002KDCU6 Specs and Replacement
Type Designator: TSM2N7002KDCU6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-363
TSM2N7002KDCU6 substitution
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TSM2N7002KDCU6 datasheet
tsm2n7002kdcu6.pdf
TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m ) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa... See More ⇒
tsm2n7002kcx.pdf
TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note... See More ⇒
tsm2n7002kcu tsm2n7002kcx.pdf
TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23 ... See More ⇒
Detailed specifications: TSM2611EDCX6, TSM2N60CH, TSM2N60CP, TSM2N60CZ, TSM2N60SCW, TSM2N7000KCT, TSM2N7002KCU, TSM2N7002KCX, IRF640, TSM2N70CH, TSM2N70CP, TSM2N70CZ, TSM2NB60CH, TSM2NB60CI, TSM2NB60CP, TSM2NB60CZ, TSM301K12CQ
Keywords - TSM2N7002KDCU6 MOSFET specs
TSM2N7002KDCU6 cross reference
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TSM2N7002KDCU6 replacement
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