TSM3400CX Specs and Replacement

Type Designator: TSM3400CX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.7 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT-23

TSM3400CX substitution

- MOSFET ⓘ Cross-Reference Search

 

TSM3400CX datasheet

 ..1. Size:242K  taiwansemi
tsm3400cx.pdf pdf_icon

TSM3400CX

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor... See More ⇒

 8.1. Size:235K  taiwansemi
tsm3401cx.pdf pdf_icon

TSM3400CX

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info... See More ⇒

 8.2. Size:338K  taiwansemi
tsm3404cx.pdf pdf_icon

TSM3400CX

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac... See More ⇒

 9.1. Size:203K  taiwansemi
tsm3424cx6.pdf pdf_icon

TSM3400CX

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin... See More ⇒

Detailed specifications: TSM2N70CH, TSM2N70CP, TSM2N70CZ, TSM2NB60CH, TSM2NB60CI, TSM2NB60CP, TSM2NB60CZ, TSM301K12CQ, 10N60, TSM3401CX, TSM3404CX, TSM3424CX6, TSM3433CX6, TSM3441CX6, TSM3442CX6, TSM3443CX6, TSM3446CX6

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.