TSM3424CX6 Datasheet. Specs and Replacement
Type Designator: TSM3424CX6 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.41 nS
Cossⓘ - Output Capacitance: 100.47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-26
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TSM3424CX6 substitution
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TSM3424CX6 datasheet
tsm3424cx6.pdf
TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin... See More ⇒
tsm3400cx.pdf
TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor... See More ⇒
tsm3441cx6.pdf
TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch ... See More ⇒
Detailed specifications: TSM2NB60CH, TSM2NB60CI, TSM2NB60CP, TSM2NB60CZ, TSM301K12CQ, TSM3400CX, TSM3401CX, TSM3404CX, 2N7000, TSM3433CX6, TSM3441CX6, TSM3442CX6, TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6, TSM3457CX6
Keywords - TSM3424CX6 MOSFET specs
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History: IXTT10N100D2 | SI7108DN | DTP4503 | IRF9395M | SI5476DU | SI7110DN | SI5475DC
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