All MOSFET. TSM3424CX6 Datasheet

 

TSM3424CX6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM3424CX6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.41 nS
   Cossⓘ - Output Capacitance: 100.47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-26

 TSM3424CX6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM3424CX6 Datasheet (PDF)

 ..1. Size:203K  taiwansemi
tsm3424cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

 9.1. Size:122K  taiwansemi
tsm3460cx6.pdf

TSM3424CX6
TSM3424CX6

 9.2. Size:242K  taiwansemi
tsm3400cx.pdf

TSM3424CX6
TSM3424CX6

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor

 9.3. Size:340K  taiwansemi
tsm3441cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch

 9.4. Size:201K  taiwansemi
tsm3446cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

 9.5. Size:343K  taiwansemi
tsm3442cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi

 9.6. Size:59K  taiwansemi
tsm3455cx6.pdf

TSM3424CX6
TSM3424CX6

 9.7. Size:208K  taiwansemi
tsm3443cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch

 9.8. Size:393K  taiwansemi
tsm3462cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 33 @ VGS = 4.5V 5.0 2. Drain 5, Drain 3. Gate 4. Source 20 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch

 9.9. Size:120K  taiwansemi
tsm3481cx6.pdf

TSM3424CX6
TSM3424CX6

 9.10. Size:235K  taiwansemi
tsm3401cx.pdf

TSM3424CX6
TSM3424CX6

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

 9.11. Size:244K  taiwansemi
tsm3457cx6.pdf

TSM3424CX6
TSM3424CX6

TSM3457 30V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 60 @ VGS = 10V -5 3. Gate 4. Source -30 100 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

 9.12. Size:338K  taiwansemi
tsm3404cx.pdf

TSM3424CX6
TSM3424CX6

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac

 9.13. Size:121K  taiwansemi
tsm3443 c07.pdf

TSM3424CX6
TSM3424CX6

 9.14. Size:119K  taiwansemi
tsm3441.pdf

TSM3424CX6
TSM3424CX6

 9.15. Size:116K  taiwansemi
tsm3433cx6 tsm3433 a07.pdf

TSM3424CX6
TSM3424CX6

 9.16. Size:59K  taiwansemi
tsm3454cx6.pdf

TSM3424CX6
TSM3424CX6

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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