TSM3433CX6 Datasheet. Specs and Replacement

Type Designator: TSM3433CX6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 191 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT-26

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TSM3433CX6 substitution

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TSM3433CX6 datasheet

 ..1. Size:116K  taiwansemi
tsm3433cx6 tsm3433 a07.pdf pdf_icon

TSM3433CX6

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 9.1. Size:203K  taiwansemi
tsm3424cx6.pdf pdf_icon

TSM3433CX6

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin... See More ⇒

 9.2. Size:122K  taiwansemi
tsm3460cx6.pdf pdf_icon

TSM3433CX6

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 9.3. Size:242K  taiwansemi
tsm3400cx.pdf pdf_icon

TSM3433CX6

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor... See More ⇒

Detailed specifications: TSM2NB60CI, TSM2NB60CP, TSM2NB60CZ, TSM301K12CQ, TSM3400CX, TSM3401CX, TSM3404CX, TSM3424CX6, P55NF06, TSM3441CX6, TSM3442CX6, TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6, TSM3457CX6, TSM3460CX6

Keywords - TSM3433CX6 MOSFET specs

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