TSM3N90CI Specs and Replacement

Type Designator: TSM3N90CI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm

Package: ITO-220

TSM3N90CI substitution

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TSM3N90CI datasheet

 ..1. Size:518K  taiwansemi
 tsm3n90ch tsm3n90ci tsm3n90cp tsm3n90cz.pdf pdf_icon

TSM3N90CI

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re... See More ⇒

 9.1. Size:514K  taiwansemi
 tsm3n80ch tsm3n80ci tsm3n80cp tsm3n80cz.pdf pdf_icon

TSM3N90CI

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 4.2 @ VGS =10V 1.5 General Description The TSM3N80 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re... See More ⇒

Detailed specifications: TSM35N10CP, TSM3900DCX6, TSM3911DCX6, TSM3N80CH, TSM3N80CI, TSM3N80CP, TSM3N80CZ, TSM3N90CH, 12N60, TSM3N90CP, TSM3N90CZ, TSM40N03PQ33, TSM40N03PQ56, TSM414K34CS, TSM4392CS, TSM4404CS, TSM4410CS

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