All MOSFET. TSM4410CS Datasheet

 

TSM4410CS MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM4410CS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.7 nC
   trⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 208.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP-8

 TSM4410CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM4410CS Datasheet (PDF)

 ..1. Size:121K  taiwansemi
 tsm4410cs.pdf

TSM4410CS TSM4410CS

 7.1. Size:122K  taiwansemi
 tsm4410dcs.pdf

TSM4410CS TSM4410CS

 8.1. Size:214K  taiwansemi
 tsm4416dcs.pdf

TSM4410CS TSM4410CS

TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 15 @ VGS = 10V 11 30 24 @ VGS = 4.5V 10 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 8.2. Size:141K  taiwansemi
 tsm4415cs.pdf

TSM4410CS TSM4410CS

Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, DrainFeatures Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat

 8.3. Size:1399K  cn vbsemi
 tsm4415cs.pdf

TSM4410CS TSM4410CS

TSM4415CSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: TPA65R070D | MCH6405 | SL4409N | SML6060AN

 

 
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