TSM4415CS MOSFET Datasheet: P-Ch, 30V, 8A. Full specification with pinout and replacement list

TSM4415CS Specs and Replacement

Type Designator: TSM4415CS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 172.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOP-8

TSM4415CS substitution

- MOSFET ⓘ Cross-Reference Search

TSM4415CS datasheet

..1. Size:141K taiwansemi
tsm4415cs.pdf pdf_icon

Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, Drain Features Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat... See More ⇒

..2. Size:1399K cn vbsemi
tsm4415cs.pdf pdf_icon

TSM4415CS www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top... See More ⇒

8.1. Size:121K taiwansemi
tsm4410cs.pdf pdf_icon