TSM4872CS Specs and Replacement
Type Designator: TSM4872CS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 343 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP-8
TSM4872CS substitution
- MOSFET ⓘ Cross-Reference Search
TSM4872CS datasheet
tsm4872cs.pdf
TSM4872 30V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 7.5 @ VGS =10V 15 4. Gate 30 5, 6, 7, 8. Drain 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Battery Sw... See More ⇒
tsm4835cs.pdf
Preliminary TSM4835 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 18 @ VGS = -10V -9.6 4. Gate -30 30 @ VGS = -4.5V -7.5 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switche... See More ⇒
tsm4886cs.pdf
TSM4886 30V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 10 @ VGS = 10V 13 4. Gate 30 5, 6, 7, 8. Drain 13.5 @ VGS = 4.5V 11 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Batter... See More ⇒
Detailed specifications: TSM4433CS, TSM4433DCS, TSM4435BCS, TSM4435CS, TSM4436CS, TSM4513DCS, TSM4539DCS, TSM4835CS, 20N50, TSM4886CS, TSM4925DCS, TSM4936DCS, TSM4944DCS, TSM4946DCS, TSM4953DCS, TSM4N60CH, TSM4N60CI
Keywords - TSM4872CS MOSFET specs
TSM4872CS cross reference
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