TSM4886CS
MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM4886CS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 343
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
SOP-8
TSM4886CS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM4886CS
Datasheet (PDF)
..1. Size:233K taiwansemi
tsm4886cs.pdf
TSM4886 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 10 @ VGS = 10V 13 4. Gate 30 5, 6, 7, 8. Drain 13.5 @ VGS = 4.5V 11 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Batter
9.1. Size:237K taiwansemi
tsm4872cs.pdf
TSM4872 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 7.5 @ VGS =10V 15 4. Gate 30 5, 6, 7, 8. Drain 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Battery Sw
9.2. Size:179K taiwansemi
tsm4835cs.pdf
Preliminary TSM4835 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 18 @ VGS = -10V -9.6 4. Gate -30 30 @ VGS = -4.5V -7.5 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switche
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