TSM4886CS MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM4886CS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 343 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP-8
TSM4886CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM4886CS Datasheet (PDF)
tsm4886cs.pdf
TSM4886 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 10 @ VGS = 10V 13 4. Gate 30 5, 6, 7, 8. Drain 13.5 @ VGS = 4.5V 11 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Batter
tsm4872cs.pdf
TSM4872 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 7.5 @ VGS =10V 15 4. Gate 30 5, 6, 7, 8. Drain 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Battery Sw
tsm4835cs.pdf
Preliminary TSM4835 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 18 @ VGS = -10V -9.6 4. Gate -30 30 @ VGS = -4.5V -7.5 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switche
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .