TSM4936DCS PDF and Equivalents Search

 

TSM4936DCS Specs and Replacement

Type Designator: TSM4936DCS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOP-8

TSM4936DCS substitution

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TSM4936DCS datasheet

 ..1. Size:338K  taiwansemi
 tsm4936dcs.pdf pdf_icon

TSM4936DCS

TSM4936D 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 36 @ VGS = 10V 5.9 30 4. Gate 2 5. Drain 2 53 @ VGS = 4.5V 4.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ... See More ⇒

 9.1. Size:503K  taiwansemi
 tsm4925dcs.pdf pdf_icon

TSM4936DCS

TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati... See More ⇒

 9.2. Size:253K  taiwansemi
 tsm4944dcs.pdf pdf_icon

TSM4936DCS

Preliminary TSM4944D 30V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 13.2 @ VGS = 10V 12.2 30 4. Gate 2 5. Drain 2 18 @ VGS = 4.5V 9.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ... See More ⇒

 9.3. Size:230K  taiwansemi
 tsm4946dcs.pdf pdf_icon

TSM4936DCS

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati... See More ⇒

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Detailed specifications: TSM4435CS, TSM4436CS, TSM4513DCS, TSM4539DCS, TSM4835CS, TSM4872CS, TSM4886CS, TSM4925DCS, STF13NM60N, TSM4944DCS, TSM4946DCS, TSM4953DCS, TSM4N60CH, TSM4N60CI, TSM4N60CP, TSM4N60CZ, TSM4N80CI

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