TSM60N06CP Specs and Replacement
Type Designator: TSM60N06CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 668 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: TO-252
TSM60N06CP substitution
- MOSFET ⓘ Cross-Reference Search
TSM60N06CP datasheet
tsm60n06cp.pdf
TSM60N06 60V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 60 7.3 @ VGS =10V 66 Features Block Diagram Advanced Trench Technology Low RDS(ON) 7.3m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Packag... See More ⇒
tsm60n03cp.pdf
TSM60N03 30V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 30 4.5 @ VGS =10V 60 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.5m (Max.) Low gate charge typical @ 12nC (Typ.) Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Packag... See More ⇒
tsm60nb1r4ch.pdf
TSM60NB1R4CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit VDS 600 V High ruggedness performance RDS(on) (max) 1.4 High commutation performance Qg 7.12 nC 100% UIL tested Pb-free plating Comp... See More ⇒
Detailed specifications: TSM4NB60CP, TSM4NB60CZ, TSM4ND50CP, TSM55N03CP, TSM5NB50CZ, TSM5ND50CH, TSM5ND50CP, TSM60N03CP, AOD4184A, TSM6866DCA, TSM6866SDCA, TSM6963SDCA, TSM6968DCA, TSM6968SDCA, TSM6981DCA, TSM6988DCX6, TSM6N50CH
Keywords - TSM60N06CP MOSFET specs
TSM60N06CP cross reference
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