TSM6968DCA MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

TSM6968DCA Specs and Replacement

Type Designator: TSM6968DCA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSSOP-8

TSM6968DCA substitution

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TSM6968DCA datasheet

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TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment 1. Drain 2. Source 1 VDS = 20V 3. Source 1 RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22m 4. Gate 1 RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29m 5, Gate 2 6. Source 2 7, Source 2 8. Drain Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance ... See More ⇒

7.1. Size:498K taiwansemi
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TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TSSOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 22 @ VGS = 4.5V 6.5 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 29 @ VGS = 2.5V 5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resi... See More ⇒

8.1. Size:344K taiwansemi
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TSM6963SD 20V Dual P-Channel MOSFET Pin Definition TSSOP-8 PRODUCT SUMMARY 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 VDS (V) RDS(on)(m ) ID (A) 3. Source 1 6. Source 2 30 @ VGS = -4.5V -4.5 4. Gate 1 5. Gate 2 -20 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low... See More ⇒

9.1. Size:289K taiwansemi
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TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2 6. Source 2 2. Drain 5, Drain 35 @ VGS = 4.5V 6.0 20 3. Gate 1 4. Source 1 40 @ VGS = 2.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET A... See More ⇒