TSM6981DCA PDF and Equivalents Search

 

TSM6981DCA Specs and Replacement

Type Designator: TSM6981DCA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 191 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSSOP-8

TSM6981DCA substitution

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TSM6981DCA datasheet

 ..1. Size:240K  taiwansemi
tsm6981dca.pdf pdf_icon

TSM6981DCA

TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition PRODUCT SUMMARY 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m ) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 40 @ VGS = -4.5V -5 4. Gate 1 5. Gate 2 -20 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V -3 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On... See More ⇒

 8.1. Size:289K  taiwansemi
tsm6988dcx6.pdf pdf_icon

TSM6981DCA

TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2 6. Source 2 2. Drain 5, Drain 35 @ VGS = 4.5V 6.0 20 3. Gate 1 4. Source 1 40 @ VGS = 2.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET A... See More ⇒

 9.1. Size:498K  taiwansemi
tsm6968sdca.pdf pdf_icon

TSM6981DCA

TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TSSOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 22 @ VGS = 4.5V 6.5 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 29 @ VGS = 2.5V 5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resi... See More ⇒

 9.2. Size:344K  taiwansemi
tsm6963sdca.pdf pdf_icon

TSM6981DCA

TSM6963SD 20V Dual P-Channel MOSFET Pin Definition TSSOP-8 PRODUCT SUMMARY 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 VDS (V) RDS(on)(m ) ID (A) 3. Source 1 6. Source 2 30 @ VGS = -4.5V -4.5 4. Gate 1 5. Gate 2 -20 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low... See More ⇒

Detailed specifications: TSM5ND50CP, TSM60N03CP, TSM60N06CP, TSM6866DCA, TSM6866SDCA, TSM6963SDCA, TSM6968DCA, TSM6968SDCA, IRFZ44N, TSM6988DCX6, TSM6N50CH, TSM6N50CI, TSM6N50CP, TSM70N10CP, TSM7401CS, TSM75N03CP, TSM75N75CZ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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