TSM7N90CZ MOSFET PDF: N-Ch, 900V, 7A. Datasheet. Full specification with pinout and replacement list

TSM7N90CZ Specs and Replacement

   Type Designator: TSM7N90CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-220

TSM7N90CZ substitution

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TSM7N90CZ datasheet

..1. Size:400K taiwansemi
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TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi... See More ⇒

9.1. Size:350K taiwansemi
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TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe... See More ⇒

9.2. Size:395K taiwansemi
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TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... See More ⇒

9.3. Size:417K taiwansemi
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TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su... See More ⇒

Detailed specifications: TSM75N03CP , TSM75N75CZ , TSM7900DCQ , TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , TSM7N90CI , IRFP260N , TSM802CQ , TSM80N08CZ , TSM85N10CZ , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI , TSM8N80CZ .