NDB5060 Specs and Replacement
Type Designator: NDB5060
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO263
NDB5060 substitution
- MOSFET ⓘ Cross-Reference Search
NDB5060 datasheet
ndp5060l ndb5060l.pdf
October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. This Critical DC electrical p... See More ⇒
ndp5060l ndb5060l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: MTP3N60FI, MTP6N60, NDB4050, NDB4050L, NDB4060, NDB4060L, NDB408A, NDB410A, 7N60, NDB5060L, NDB508A, NDB510A, NDB6020, NDB6020P, NDB6030, NDB6030L, NDB6030PL
Keywords - NDB5060 MOSFET specs
NDB5060 cross reference
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