All MOSFET. NDB5060 Datasheet

 

NDB5060 Datasheet and Replacement


   Type Designator: NDB5060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO263
 

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NDB5060 Datasheet (PDF)

 0.1. Size:358K  fairchild semi
 ndp5060l ndb5060l.pdf pdf_icon

NDB5060

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. ThisCritical DC electrical p

 0.2. Size:468K  onsemi
 ndp5060l ndb5060l.pdf pdf_icon

NDB5060

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: MTP3N60FI , MTP6N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , NDB410A , MMIS60R580P , NDB5060L , NDB508A , NDB510A , NDB6020 , NDB6020P , NDB6030 , NDB6030L , NDB6030PL .

History: NTHS4166N

Keywords - NDB5060 MOSFET datasheet

 NDB5060 cross reference
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