TSM8N50CP MOSFET. Datasheet pdf. Equivalent

   Type Designator: TSM8N50CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.6 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 127.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252

TSM8N50CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS