TSM8N50CP Datasheet. Specs and Replacement
Type Designator: TSM8N50CP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 127.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-252
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TSM8N50CP substitution
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TSM8N50CP datasheet
tsm8n50ch tsm8n50cp.pdf
TSM8N50 500V N-Channel MOSFET TO-251 TO-252 PRODUCT SUMMARY Pin Definition (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 7.2 Features Block Diagram Low On-Resistance. High power and current handing capability. Ordering Information Part No. Package Packing TSM8N50CH C5G TO-251 75pcs / Tube TSM8N50CP ROG TO-252... See More ⇒
tsm8n80ci tsm8n80cz.pdf
TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide... See More ⇒
tsm8n70ci.pdf
TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( )(max) ID (A) 2. Drain 3. Source 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide sup... See More ⇒
Detailed specifications: TSM7N65CI, TSM7N65CZ, TSM7N90CI, TSM7N90CZ, TSM802CQ, TSM80N08CZ, TSM85N10CZ, TSM8N50CH, AON6414A, TSM8N70CI, TSM8N80CI, TSM8N80CZ, TSM9409CS, TSM9426DCS, TSM9428CS, TSM9428DCS, TSM9434CS
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