TSM8N70CI Datasheet and Replacement
Type Designator: TSM8N70CI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 148 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: ITO-220
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TSM8N70CI Datasheet (PDF)
tsm8n70ci.pdf

TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide sup
tsm8n80ci tsm8n80cz.pdf

TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
tsm8n50ch tsm8n50cp.pdf

TSM8N50 500V N-Channel MOSFET TO-251 TO-252 PRODUCT SUMMARY Pin Definition: (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 7.2 Features Block Diagram Low On-Resistance. High power and current handing capability. Ordering Information Part No. Package Packing TSM8N50CH C5G TO-251 75pcs / Tube TSM8N50CP ROG TO-252
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF9N70L | CED05N8 | AON6794 | IRLR024 | TMAN9N90 | BUZ84 | BL10N70-A
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History: AOTF9N70L | CED05N8 | AON6794 | IRLR024 | TMAN9N90 | BUZ84 | BL10N70-A



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