TSM9434CS MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM9434CS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.5 nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 191 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP-8
TSM9434CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM9434CS Datasheet (PDF)
tsm9434cs.pdf
TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch
tsm9434dcs.pdf
TSM9434D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 40 @ VGS = -4.5V -6.4 -20 4. Gate 2 5. Drain 2 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Appli
tsm9435cs.pdf
TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit
tsm9428dcs.pdf
TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P
tsm9409cs.pdf
TSM9409 60V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 155 @ VGS = -10V -3.5 4. Gate -60 5, 6, 7, 8. Drain 200 @ VGS = 4.5V -3.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA
tsm9426dcs.pdf
TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 14 @ VGS = 10V 9.4 4. Gate 2 5. Drain 2 16 @ VGS = 4.5V 8 20 22 @ VGS = 2.5V 6 30 @ VGS = 1.8V 4 Features Block Diagram Advance Trench Process Technology High Density Ce
tsm9428cs.pdf
TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 6.0 4. Gate 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch O
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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