TSM9N50CZ MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM9N50CZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 63 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220
TSM9N50CZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM9N50CZ Datasheet (PDF)
tsm9n50ci tsm9n50cz.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista
tsm9n90cn.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
tsm9nb50ci tsm9nb50cz.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov
tsm9n90ci tsm9n90cz.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![TSM9N50CZ](https://alltransistors.com/images/us.png)
![TSM9N50CZ](https://alltransistors.com/images/es.png)
![TSM9N50CZ](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C