All MOSFET. TSM9N50CZ Datasheet

 

TSM9N50CZ Datasheet and Replacement


   Type Designator: TSM9N50CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 63 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
 

 TSM9N50CZ substitution

   - MOSFET ⓘ Cross-Reference Search

 

TSM9N50CZ Datasheet (PDF)

 ..1. Size:210K  taiwansemi
 tsm9n50ci tsm9n50cz.pdf pdf_icon

TSM9N50CZ

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista

 9.1. Size:311K  taiwansemi
 tsm9n90cn.pdf pdf_icon

TSM9N50CZ

TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 9.2. Size:164K  taiwansemi
 tsm9nb50ci tsm9nb50cz.pdf pdf_icon

TSM9N50CZ

TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

 9.3. Size:419K  taiwansemi
 tsm9n90ci tsm9n90cz.pdf pdf_icon

TSM9N50CZ

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

SHOW MORE

Datasheet: TSM9428DCS , TSM9434CS , TSM9434DCS , TSM9435CS , TSM9926DCS , TSM9933DCS , TSM9966DCX6 , TSM9N50CI , AON7410 , TSM9N90CI , TSM9N90CN , TSM9N90CZ , TSM9NB50CI , TSM9NB50CZ , TSU45N60 , TT8J11 , TT8J13 .

Keywords - TSM9N50CZ MOSFET datasheet

 TSM9N50CZ cross reference
 TSM9N50CZ equivalent finder
 TSM9N50CZ lookup
 TSM9N50CZ substitution
 TSM9N50CZ replacement

 

 
Back to Top

 


 
.