All MOSFET. BUK129-50DL Datasheet

 

BUK129-50DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK129-50DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-404

 BUK129-50DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK129-50DL Datasheet (PDF)

 ..1. Size:40K  philips
buk129-50dl.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK129-50DL SMD version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD T

 9.1. Size:67K  philips
buk127-50dl 1.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.2. Size:45K  philips
buk127-50gt.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI

 9.3. Size:40K  philips
buk128-50dl.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To

 9.4. Size:66K  philips
buk127-50dl.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.5. Size:165K  philips
buk124-50l.pdf

BUK129-50DL
BUK129-50DL

Philips Semiconductors Product Specification Logic level TOPFET BUK124-50L TO-220 version of BUK135-50LDESCRIPTION QUICK REFERENCE DATAMonolithic logic level protected SYMBOL PARAMETER MAX. UNITpower MOSFET using TOPFET2technology assembled in a 5 pin VDS Continuous drain source voltage 50 Vsurface mounting plastic package. ID Continuous drain current 30 APtot Total power dissi

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SUM25P10-138

 

 
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