All MOSFET. BUK129-50DL Datasheet

 

BUK129-50DL Datasheet and Replacement


   Type Designator: BUK129-50DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-404
      - MOSFET Cross-Reference Search

 

BUK129-50DL Datasheet (PDF)

 ..1. Size:40K  philips
buk129-50dl.pdf pdf_icon

BUK129-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK129-50DL SMD version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD T

 9.1. Size:67K  philips
buk127-50dl 1.pdf pdf_icon

BUK129-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.2. Size:45K  philips
buk127-50gt.pdf pdf_icon

BUK129-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI

 9.3. Size:40K  philips
buk128-50dl.pdf pdf_icon

BUK129-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | BSS84AKMB | STD4N62K3

Keywords - BUK129-50DL MOSFET datasheet

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