BUK7514-60E PDF and Equivalents Search

 

BUK7514-60E Specs and Replacement

Type Designator: BUK7514-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 197 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-220AB

BUK7514-60E substitution

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BUK7514-60E datasheet

 ..1. Size:207K  nxp
 buk7514-60e.pdf pdf_icon

BUK7514-60E

BUK7514-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repet... See More ⇒

 6.1. Size:52K  philips
 buk7514-55 2.pdf pdf_icon

BUK7514-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 68 A features very low on-state ... See More ⇒

 6.2. Size:50K  philips
 buk7514-30 1.pdf pdf_icon

BUK7514-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 69 A features very low on-state ... See More ⇒

 6.3. Size:68K  philips
 buk7514-55a buk7614-55a.pdf pdf_icon

BUK7514-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench tec... See More ⇒

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Detailed specifications: BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C, BUK6C3R3-75C, BUK7213-40A, BUK7505-30A, IRFZ46N, BUK751R6-30E, BUK751R8-40E, BUK7524-55A, BUK752R3-40E, BUK752R7-60E, BUK753R1-40E, BUK753R5-60E, BUK753R8-80E

Keywords - BUK7514-60E MOSFET specs

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