BUK7514-60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7514-60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 58
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22.9
nC
trⓘ - Rise Time: 9.2
nS
Cossⓘ -
Output Capacitance: 197
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO-220AB
BUK7514-60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7514-60E
Datasheet (PDF)
..1. Size:207K nxp
buk7514-60e.pdf
BUK7514-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repet
6.1. Size:52K philips
buk7514-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 68 Afeatures very low on-state
6.2. Size:50K philips
buk7514-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7514-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 69 Afeatures very low on-state
6.3. Size:68K philips
buk7514-55a buk7614-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec
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