BUK751R8-40E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK751R8-40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 145 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 1620 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0018 Ohm
Package: TO-220AB
BUK751R8-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK751R8-40E Datasheet (PDF)
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