BUK752R7-60E Specs and Replacement
Type Designator: BUK752R7-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ -
Output Capacitance: 1066 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO-220AB
BUK752R7-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK752R7-60E datasheet
..1. Size:211K nxp
buk752r7-60e.pdf 
BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
7.1. Size:222K philips
buk752r3-40c.pdf
BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance ... See More ⇒
7.2. Size:212K nxp
buk752r3-40e.pdf
BUK752R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
8.1. Size:314K philips
buk7524-55a buk7524-55a buk7624-55a.pdf
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS techno... See More ⇒
8.2. Size:96K philips
buk7528-55a buk7628-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec... See More ⇒
8.3. Size:80K philips
buk7528 buk7628-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench ... See More ⇒
8.4. Size:313K philips
buk7524 buk7624 55a-01.pdf
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
8.5. Size:52K philips
buk7520-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 52 A features very low on-state ... See More ⇒
8.6. Size:294K philips
buk7526-100b buk7626-100b.pdf
BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on... See More ⇒
8.7. Size:52K philips
buk7524-55 3.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 45 A features very low on-state ... See More ⇒
8.8. Size:310K philips
buk7523-75a buk7623-75a.pdf
BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
8.9. Size:52K philips
buk7528-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 40 A features very low on-state ... See More ⇒
Detailed specifications: BUK6C3R3-75C, BUK7213-40A, BUK7505-30A, BUK7514-60E, BUK751R6-30E, BUK751R8-40E, BUK7524-55A, BUK752R3-40E, AON7403, BUK753R1-40E, BUK753R5-60E, BUK753R8-80E, BUK754R7-60E, BUK755R4-100E, BUK758R3-40E, BUK7605-30A, BUK7613-100E
Keywords - BUK752R7-60E MOSFET specs
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