BUK7615-100A MOSFET Datasheet: N-Ch, 100V, 75A. Full specification with pinout and replacement list

BUK7615-100A Specs and Replacement

Type Designator: BUK7615-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOT-404

BUK7615-100A substitution

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BUK7615-100A datasheet

..1. Size:55K philips
buk7615-100a 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the d... See More ⇒

..2. Size:54K philips
buk7615-100a.pdf pdf_icon

7.1. Size:292K philips
buk76150-55a.pdf pdf_icon

BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applicat... See More ⇒

7.2. Size:302K philips
buk75150 buk76150 55a-01.pdf pdf_icon