BUK7615-100A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7615-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOT-404
BUK7615-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7615-100A Datasheet (PDF)
buk7615-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d
buk7615-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d
buk76150-55a.pdf
BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat
buk75150 buk76150 55a-01.pdf
BUK75150-55A;BUK76150-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK75150-55A in SOT78 (TO-220AB)BUK76150-55A in SOT404 (D 2-PAK).2. Features TrenchMOS
buk75150-55a buk76150-55a.pdf
BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat
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