All MOSFET. BUK7616-55A Datasheet

 

BUK7616-55A Datasheet and Replacement


   Type Designator: BUK7616-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2PAK
 

 BUK7616-55A substitution

   - MOSFET ⓘ Cross-Reference Search

 

BUK7616-55A Datasheet (PDF)

 ..1. Size:306K  philips
buk7516-55a buk7616-55a buk7616-55a.pdf pdf_icon

BUK7616-55A

BUK7516-55A; BUK7616-55ATrenchMOS standard level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7516-55A in SOT78 (TO-220AB)BUK7616-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 8.1. Size:55K  philips
buk7615-100a 1.pdf pdf_icon

BUK7616-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d

 8.2. Size:52K  philips
buk7614-55.pdf pdf_icon

BUK7616-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

 8.3. Size:93K  philips
buk7619-100b.pdf pdf_icon

BUK7616-55A

BUK7619-100BN-channel TrenchMOS standard level FETRev. 01 10 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible1.3

Datasheet: BUK755R4-100E , BUK758R3-40E , BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 , BUK76150-55A , BUK7615-100A , IRF740 , BUK761R3-30E , BUK761R4-30E , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E .

Keywords - BUK7616-55A MOSFET datasheet

 BUK7616-55A cross reference
 BUK7616-55A equivalent finder
 BUK7616-55A lookup
 BUK7616-55A substitution
 BUK7616-55A replacement

 

 
Back to Top

 


 
.