BUK761R7-40E Specs and Replacement
Type Designator: BUK761R7-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 324 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1376 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: D2PAK
BUK761R7-40E substitution
- MOSFET ⓘ Cross-Reference Search
BUK761R7-40E datasheet
buk761r8-30c.pdf
BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol... See More ⇒
buk761r5-40e.pdf
BUK761R5-40E N-channel TrenchMOS standard level FET 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒
Detailed specifications: BUK7614-55, BUK76150-55A, BUK7615-100A, BUK7616-55A, BUK761R3-30E, BUK761R4-30E, BUK761R5-40E, BUK761R6-40E, 50N06, BUK762R0-40E, BUK762R4-60E, BUK762R6-40E, BUK762R6-60E, BUK762R9-40E, BUK7631-100E, BUK763R1-60E, BUK763R4-30
Keywords - BUK761R7-40E MOSFET specs
BUK761R7-40E cross reference
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BUK761R7-40E substitution
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FQP13N10L | BLF6G22S-45
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