All MOSFET. BUK762R0-40E Datasheet

 

BUK762R0-40E Datasheet and Replacement


   Type Designator: BUK762R0-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 293 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 109.2 nC
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: D2PAK
 

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BUK762R0-40E Datasheet (PDF)

 ..1. Size:210K  nxp
buk762r0-40e.pdf pdf_icon

BUK762R0-40E

BUK762R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 3.1. Size:205K  philips
buk762r0-40c.pdf pdf_icon

BUK762R0-40E

BUK762R0-40CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f

 7.1. Size:231K  nxp
buk762r4-60e.pdf pdf_icon

BUK762R0-40E

BUK762R4-60EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

 7.2. Size:211K  nxp
buk762r9-40e.pdf pdf_icon

BUK762R0-40E

BUK762R9-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

Datasheet: BUK76150-55A , BUK7615-100A , BUK7616-55A , BUK761R3-30E , BUK761R4-30E , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , IRF640 , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E .

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