BUK762R6-40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK762R6-40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 263
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 1032
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package:
D2PAK
BUK762R6-40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK762R6-40E
Datasheet (PDF)
..1. Size:210K nxp
buk762r6-40e.pdf 
BUK762R6-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
5.1. Size:207K nxp
buk762r6-60e.pdf
BUK762R6-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
7.1. Size:205K philips
buk762r0-40c.pdf
BUK762R0-40CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f
7.2. Size:210K nxp
buk762r0-40e.pdf
BUK762R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
7.3. Size:231K nxp
buk762r4-60e.pdf
BUK762R4-60EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
7.4. Size:211K nxp
buk762r9-40e.pdf
BUK762R9-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
7.5. Size:784K nxp
buk762r7-30b.pdf
BUK762R7-30BN-channel TrenchMOS standard level FETRev. 04 8 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe
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