All MOSFET. BUK762R9-40E Datasheet

 

BUK762R9-40E Datasheet and Replacement


   Type Designator: BUK762R9-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 234 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 885 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: D2PAK
 

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BUK762R9-40E Datasheet (PDF)

 ..1. Size:211K  nxp
buk762r9-40e.pdf pdf_icon

BUK762R9-40E

BUK762R9-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:205K  philips
buk762r0-40c.pdf pdf_icon

BUK762R9-40E

BUK762R0-40CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f

 7.2. Size:210K  nxp
buk762r0-40e.pdf pdf_icon

BUK762R9-40E

BUK762R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.3. Size:231K  nxp
buk762r4-60e.pdf pdf_icon

BUK762R9-40E

BUK762R4-60EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

Datasheet: BUK761R4-30E , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , IRFP260N , BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E , BUK764R4-60E .

History: BUK7624-55A | UPA2766T1A

Keywords - BUK762R9-40E MOSFET datasheet

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