BUK7631-100E Specs and Replacement
Type Designator: BUK7631-100E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 34
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 18.2
nS
Cossⓘ -
Output Capacitance: 145
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031
Ohm
Package:
D2PAK
BUK7631-100E substitution
-
MOSFET ⓘ Cross-Reference Search
BUK7631-100E Specs
..1. Size:209K nxp
buk7631-100e.pdf 
BUK7631-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
8.1. Size:302K philips
buk7535 buk7635 55a-01.pdf 
BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
8.2. Size:55K philips
buk7635-55 2.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 34 A trench technology the devi... See More ⇒
8.3. Size:104K philips
buk763r4-30.pdf 
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
8.5. Size:323K philips
buk753r1-40b buk763r1-40b.pdf 
BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta... See More ⇒
8.6. Size:108K philips
buk753r4-30b buk763r4-30b.pdf 
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
8.7. Size:313K philips
buk7535-55a buk7635-55a.pdf 
BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
8.8. Size:978K nxp
buk763r1-40b.pdf 
BUK763R1-40B N-channel TrenchMOS standard level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒
8.9. Size:947K nxp
buk763r6-40c.pdf 
BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒
8.10. Size:207K nxp
buk763r9-60e.pdf 
BUK763R9-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
8.11. Size:760K nxp
buk7635-55a.pdf 
BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
8.12. Size:902K nxp
buk7635-100a.pdf 
BUK7635-100A N-channel TrenchMOS standard level FET Rev. 02 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒
8.13. Size:207K nxp
buk763r1-60e.pdf 
BUK763R1-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
8.14. Size:826K nxp
buk763r4-30b.pdf 
BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F... See More ⇒
Detailed specifications: BUK761R5-40E
, BUK761R6-40E
, BUK761R7-40E
, BUK762R0-40E
, BUK762R4-60E
, BUK762R6-40E
, BUK762R6-60E
, BUK762R9-40E
, IRFB4110
, BUK763R1-60E
, BUK763R4-30
, BUK763R8-80E
, BUK763R9-60E
, BUK764R0-40E
, BUK764R2-80E
, BUK764R4-60E
, BUK765R0-100E
.
History: 2SJ266
Keywords - BUK7631-100E MOSFET specs
BUK7631-100E cross reference
BUK7631-100E equivalent finder
BUK7631-100E lookup
BUK7631-100E substitution
BUK7631-100E replacement
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