BUK768R3-60E Specs and Replacement
Type Designator: BUK768R3-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 137 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 319 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: D2PAK
BUK768R3-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK768R3-60E datasheet
buk768r3-60e.pdf
BUK768R3-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk768r1-100e.pdf
BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repet... See More ⇒
buk768r1-40e.pdf
BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 complian... See More ⇒
buk7524-55a buk7524-55a buk7624-55a.pdf
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS techno... See More ⇒
buk7615-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the d... See More ⇒
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10... See More ⇒
buk7528-55a buk7628-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec... See More ⇒
buk7605-30a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev... See More ⇒
buk755r2-40b buk765r2-40b.pdf
BUK75/765R2-40B TrenchMOS standard level FET Rev. 01 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK755R2-40B in SOT78 (TO-220AB) BUK765R2-40B in SOT404 (D2-PAK). 1.2 Features TrenchMOS ... See More ⇒
buk7509 buk7609 75a 02.pdf
BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
buk7614-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the devi... See More ⇒
buk7507-55b buk7607-55b.pdf
BUK75/7607-55B TrenchMOS standard level FET Rev. 01 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-stat... See More ⇒
buk7575-55a buk7675-55a.pdf
BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
buk7619-100b.pdf
BUK7619-100B N-channel TrenchMOS standard level FET Rev. 01 10 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible 1.3 ... See More ⇒
buk7516-55a buk7616-55a buk7616-55a.pdf
BUK7516-55A; BUK7616-55A TrenchMOS standard level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
buk7535 buk7635 55a-01.pdf
BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
buk7614-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the devi... See More ⇒
buk7621-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7621-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 50 A trench technology. The devi... See More ⇒
buk7614-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 69 A trench technology. The devi... See More ⇒
buk76150-55a.pdf
BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applicat... See More ⇒
buk7528 buk7628-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench ... See More ⇒
buk7628-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7628-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 40 A trench technology the devi... See More ⇒
buk7508 buk7608-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec... See More ⇒
buk7524 buk7624 55a-01.pdf
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
buk7615-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the d... See More ⇒
buk7506-75b buk7606-75b.pdf
BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat... See More ⇒
buk7606-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev... See More ⇒
buk7509-55a buk7609-55a.pdf
BUK75/7609-55A TrenchMOS standard level FET Rev. 01 6 August 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-55A in SOT78 (TO-220AB) BUK7609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 complia... See More ⇒
buk7618-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7618-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 55 A trench technology. The devi... See More ⇒
buk7608-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the devi... See More ⇒
buk7635-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 34 A trench technology the devi... See More ⇒
buk7526-100b buk7626-100b.pdf
BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on... See More ⇒
buk7606-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi... See More ⇒
buk762r0-40c.pdf
BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f... See More ⇒
buk7624-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7624-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 45 A trench technology the devi... See More ⇒
buk7640-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7640-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 37 A trench technology the d... See More ⇒
buk7507-30b buk7607-30b.pdf
BUK75/7607-30B TrenchMOS standard level FET Rev. 01 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features Very low on-st... See More ⇒
buk764r0-75c.pdf
BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒
buk7605-30a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev... See More ⇒
buk763r4-30.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
buk753r1-40b buk763r1-40b.pdf
BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta... See More ⇒
buk7610-55al.pdf
BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri... See More ⇒
buk75150-55a buk76150-55a.pdf
BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applicat... See More ⇒
buk7523-75a buk7623-75a.pdf
BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒
buk7675-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 19.7 A trench technology the de... See More ⇒
buk7618-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7618-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 57 A trench technology the devi... See More ⇒
buk7509-75a buk7609-75a.pdf
BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
buk761r8-30c.pdf
BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol... See More ⇒
buk754r0-55b buk764r0-55b.pdf
BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l... See More ⇒
buk754r3-40b buk764r3-40b.pdf
BUK75/764R3-40B TrenchMOS standard level FET Rev. 01 09 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK). 1.2 Features Very low on... See More ⇒
buk7610-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi... See More ⇒
buk7620-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7620-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 52 A trench technology the devi... See More ⇒
buk7514-55a buk7614-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench tec... See More ⇒
buk753r4-30b buk763r4-30b.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
buk7535-55a buk7635-55a.pdf
BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
buk766r0-60e.pdf
BUK766R0-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7613-60e.pdf
BUK7613-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
buk7606-55a.pdf
BUK7606-55A N-channel TrenchMOS standard level FET Rev. 03 1 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk764r4-60e.pdf
BUK764R4-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7660-100a.pdf
BUK7660-100A N-channel TrenchMOS standard level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒
buk7626-100b.pdf
BUK7626-100B N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk7607-55b.pdf
BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea... See More ⇒
buk7620-100a.pdf
BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk7675-100a.pdf
BUK7675-100A N-channel TrenchMOS standard level FET Rev. 02 31 July 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F... See More ⇒
buk761r5-40e.pdf
BUK761R5-40E N-channel TrenchMOS standard level FET 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒
buk763r1-40b.pdf
BUK763R1-40B N-channel TrenchMOS standard level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒
buk7608-40b.pdf
BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒
buk769r6-80e.pdf
BUK769R6-80E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
buk7606-75b.pdf
BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk763r6-40c.pdf
BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒
buk763r9-60e.pdf
BUK763R9-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk762r0-40e.pdf
BUK762R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk765r3-40e.pdf
BUK765R3-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7631-100e.pdf
BUK7631-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
buk7611-55a.pdf
BUK7611-55A N-channel TrenchMOS standard level FET Rev. 02 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒
buk7640-100a.pdf
BUK7640-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F... See More ⇒
buk7623-75a.pdf
BUK7623-75A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 ... See More ⇒
buk7635-55a.pdf
BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk764r2-80e.pdf
BUK764R2-80E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
buk7606-55b.pdf
BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒
buk765r0-100e.pdf
BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant ... See More ⇒
buk7610-100b.pdf
BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and ben... See More ⇒
buk7675-55a.pdf
BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 ... See More ⇒
buk7613-75b.pdf
BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk762r9-40e.pdf
BUK762R9-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7635-100a.pdf
BUK7635-100A N-channel TrenchMOS standard level FET Rev. 02 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒
buk764r0-75c.pdf
BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒
buk765r2-40b.pdf
BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 22 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒
buk7608-55a.pdf
BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒
buk762r6-60e.pdf
BUK762R6-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7610-55al.pdf
BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a... See More ⇒
buk764r0-40e.pdf
BUK764R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk763r1-60e.pdf
BUK763R1-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7618-55.pdf
BUK7618-55 N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea... See More ⇒
buk762r6-40e.pdf
BUK762R6-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk7628-100a.pdf
BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F... See More ⇒
buk7613-100e.pdf
BUK7613-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
buk764r0-55b.pdf
BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒
buk7611-55b.pdf
BUK7611-55B N-channel TrenchMOS standard level FET Rev. 3 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 ... See More ⇒
buk763r4-30b.pdf
BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F... See More ⇒
buk761r4-30e.pdf
BUK761R4-30E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti... See More ⇒
buk762r7-30b.pdf
BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 8 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒
buk761r6-40e.pdf
BUK761R6-40E N-channel TrenchMOS standard level FET 5 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rate... See More ⇒
buk7675-55a.pdf
BUK7675-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS ... See More ⇒
Detailed specifications: BUK764R0-40E, BUK764R2-80E, BUK764R4-60E, BUK765R0-100E, BUK765R3-40E, BUK766R0-60E, BUK768R1-100E, BUK768R1-40E, IRFP250N, BUK769R6-80E, BUK7E13-60E, BUK7E1R6-30E, BUK7E1R8-40E, BUK7E1R9-40E, BUK7E2R3-40E, BUK7E2R6-60E, BUK7E3R1-40E
Keywords - BUK768R3-60E MOSFET specs
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History: PE616BA
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