BUK7E1R8-40E Specs and Replacement
Type Designator: BUK7E1R8-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: I2PAK
BUK7E1R8-40E substitution
- MOSFET ⓘ Cross-Reference Search
BUK7E1R8-40E datasheet
buk7e1r8-40e.pdf
BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
buk7e1r9-40e.pdf
BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
buk7e1r6-30e.pdf
BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
buk7e13-60e.pdf
BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
Detailed specifications: BUK765R3-40E, BUK766R0-60E, BUK768R1-100E, BUK768R1-40E, BUK768R3-60E, BUK769R6-80E, BUK7E13-60E, BUK7E1R6-30E, 2SK3878, BUK7E1R9-40E, BUK7E2R3-40E, BUK7E2R6-60E, BUK7E3R1-40E, BUK7E3R5-60E, BUK7E4R0-80E, BUK7E4R6-60E, BUK7E5R2-100E
Keywords - BUK7E1R8-40E MOSFET specs
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