All MOSFET. BUK7E1R9-40E Datasheet

 

BUK7E1R9-40E Datasheet and Replacement


   Type Designator: BUK7E1R9-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 324 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 1376 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: I2PAK
 

 BUK7E1R9-40E substitution

   - MOSFET ⓘ Cross-Reference Search

 

BUK7E1R9-40E Datasheet (PDF)

 ..1. Size:207K  nxp
buk7e1r9-40e.pdf pdf_icon

BUK7E1R9-40E

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 7.1. Size:209K  nxp
buk7e1r8-40e.pdf pdf_icon

BUK7E1R9-40E

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 7.2. Size:208K  nxp
buk7e1r6-30e.pdf pdf_icon

BUK7E1R9-40E

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 8.1. Size:205K  nxp
buk7e13-60e.pdf pdf_icon

BUK7E1R9-40E

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

Datasheet: BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , BUK7E13-60E , BUK7E1R6-30E , BUK7E1R8-40E , 12N60 , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E , BUK7E4R6-60E , BUK7E5R2-100E , BUK7E8R3-40E .

History: APM7332K | PJF2NA70 | BLM16N10-P | SVF9N90F | MDHT4N25URH | 2SK2979 | BUK663R5-55C

Keywords - BUK7E1R9-40E MOSFET datasheet

 BUK7E1R9-40E cross reference
 BUK7E1R9-40E equivalent finder
 BUK7E1R9-40E lookup
 BUK7E1R9-40E substitution
 BUK7E1R9-40E replacement

 

 
Back to Top

 


 
.