BUK7E2R3-40E Datasheet. Specs and Replacement
Type Designator: BUK7E2R3-40E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 293 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 1210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: I2PAK
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BUK7E2R3-40E substitution
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BUK7E2R3-40E datasheet
..1. Size:211K nxp
buk7e2r3-40e.pdf 
BUK7E2R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
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buk7e2r3-40c.pdf
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buk7e04-40a.pdf
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BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive ... See More ⇒
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buk7e5r2-100e.pdf
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buk7e3r1-40e.pdf
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buk7e1r8-40e.pdf
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buk7e8r3-40e.pdf
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buk7e1r9-40e.pdf
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buk7e1r6-30e.pdf
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buk7e13-60e.pdf
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buk7e4r6-60e.pdf
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buk7e4r0-80e.pdf
BUK7E4R0-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.13. Size:208K nxp
buk7e3r5-60e.pdf
BUK7E3R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
Detailed specifications: BUK768R1-100E, BUK768R1-40E, BUK768R3-60E, BUK769R6-80E, BUK7E13-60E, BUK7E1R6-30E, BUK7E1R8-40E, BUK7E1R9-40E, IRF9540N, BUK7E2R6-60E, BUK7E3R1-40E, BUK7E3R5-60E, BUK7E4R0-80E, BUK7E4R6-60E, BUK7E5R2-100E, BUK7E8R3-40E, BUK7K12-60E
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
