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BUK7E2R3-40E Specs and Replacement


   Type Designator: BUK7E2R3-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 293 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: I2PAK
 

 BUK7E2R3-40E substitution

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BUK7E2R3-40E Specs

 ..1. Size:211K  nxp
buk7e2r3-40e.pdf pdf_icon

BUK7E2R3-40E

BUK7E2R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

 3.1. Size:221K  philips
buk7e2r3-40c.pdf pdf_icon

BUK7E2R3-40E

BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance ... See More ⇒

 7.1. Size:208K  nxp
buk7e2r6-60e.pdf pdf_icon

BUK7E2R3-40E

BUK7E2R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

 9.1. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdf pdf_icon

BUK7E2R3-40E

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar... See More ⇒

Detailed specifications: BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , BUK7E13-60E , BUK7E1R6-30E , BUK7E1R8-40E , BUK7E1R9-40E , 2N7002 , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E , BUK7E4R6-60E , BUK7E5R2-100E , BUK7E8R3-40E , BUK7K12-60E .

History: DAMH75N500H

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