BUK7E4R6-60E Datasheet and Replacement
Type Designator: BUK7E4R6-60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 234
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 100
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 39
nS
Cossⓘ -
Output Capacitance: 637
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046
Ohm
Package:
I2PAK
BUK7E4R6-60E substitution
-
MOSFET ⓘ Cross-Reference Search
BUK7E4R6-60E Datasheet (PDF)
..1. Size:208K nxp
buk7e4r6-60e.pdf 
BUK7E4R6-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
7.1. Size:273K philips
buk754r3-75c buk7e4r3-75c.pdf
BUK754R3-75C; BUK7E4R3-75CN-channel TrenchMOS standard level FETRev. 01 10 August 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar
7.2. Size:208K nxp
buk7e4r0-80e.pdf
BUK7E4R0-80EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.1. Size:221K philips
buk7e2r3-40c.pdf
BUK7E2R3-40CN-channel TrenchMOS standard level FETRev. 03 26 January 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance
9.2. Size:202K philips
buk7e04-40a.pdf
BUK7E04-40AN-channel TrenchMOS standard level FETRev. 03 15 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe
9.3. Size:79K philips
buk7e07-55b.pdf
BUK7E07-55BN-channel TrenchMOS standard level FETRev. 01 29 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology. This product hasbeen designed and qualified to the appropriate AEC standard for use in Automotive
9.4. Size:206K nxp
buk7e5r2-100e.pdf
BUK7E5R2-100EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Re
9.5. Size:208K nxp
buk7e2r6-60e.pdf
BUK7E2R6-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.6. Size:211K nxp
buk7e3r1-40e.pdf
BUK7E3R1-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.7. Size:209K nxp
buk7e1r8-40e.pdf
BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.8. Size:210K nxp
buk7e8r3-40e.pdf
BUK7E8R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.9. Size:207K nxp
buk7e1r9-40e.pdf
BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
9.10. Size:208K nxp
buk7e1r6-30e.pdf
BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.11. Size:205K nxp
buk7e13-60e.pdf
BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
9.12. Size:211K nxp
buk7e2r3-40e.pdf
BUK7E2R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
9.13. Size:208K nxp
buk7e3r5-60e.pdf
BUK7E3R5-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep
Datasheet: BUK7E1R6-30E
, BUK7E1R8-40E
, BUK7E1R9-40E
, BUK7E2R3-40E
, BUK7E2R6-60E
, BUK7E3R1-40E
, BUK7E3R5-60E
, BUK7E4R0-80E
, SPP20N60C3
, BUK7E5R2-100E
, BUK7E8R3-40E
, BUK7K12-60E
, BUK7K17-60E
, BUK7K18-40E
, BUK7K25-40E
, BUK7K35-60E
, BUK7K52-60E
.
History: AP9926GEO-HF
| GSM3401S
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