BUK7K8R7-40E Specs and Replacement
Type Designator: BUK7K8R7-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: LFPAK56D
BUK7K8R7-40E substitution
- MOSFET ⓘ Cross-Reference Search
BUK7K8R7-40E datasheet
..1. Size:336K nxp
buk7k8r7-40e.pdf 
BUK7K8R7-40E Dual N-channel 40 V, 8.5 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
8.1. Size:716K nxp
buk7k89-100e.pdf 
BUK7K89-100E Dual N-channel 100 V, 82.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET... See More ⇒
9.1. Size:713K nxp
buk7k134-100e.pdf 
BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET... See More ⇒
9.2. Size:255K nxp
buk7k17-80e.pdf 
BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC... See More ⇒
9.3. Size:253K nxp
buk7k15-80e.pdf 
BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC... See More ⇒
9.4. Size:325K nxp
buk7k12-60e.pdf 
BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.5. Size:716K nxp
buk7k45-100e.pdf 
BUK7K45-100E Dual N-channel 100 V, 37.6 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET... See More ⇒
9.6. Size:304K nxp
buk7k5r6-30e.pdf 
BUK7K5R6-30E Dual N-channel 30 V, 5.6 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.7. Size:296K nxp
buk7k5r1-30e.pdf 
BUK7K5R1-30E Dual N-channel 30 V, 5.1 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.9. Size:264K nxp
buk7k23-80e.pdf 
BUK7K23-80E Dual N-channel 80 V, 23 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC... See More ⇒
9.10. Size:294K nxp
buk7k6r8-40e.pdf 
BUK7K6R8-40E Dual N-channel 40 V, 6.8 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.12. Size:712K nxp
buk7k32-100e.pdf 
BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET... See More ⇒
9.13. Size:286K nxp
buk7k25-40e.pdf 
BUK7K25-40E Dual N-channel TrenchMOS standard level FET 23 April 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche r... See More ⇒
9.14. Size:336K nxp
buk7k6r2-40e.pdf 
BUK7K6R2-40E Dual N-channel 40 V, 5.8 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.15. Size:712K nxp
buk7k29-100e.pdf 
BUK7K29-100E Dual N-channel 100 V, 24.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET... See More ⇒
Detailed specifications: BUK7K18-40E, BUK7K25-40E, BUK7K35-60E, BUK7K52-60E, BUK7K5R1-30E, BUK7K5R6-30E, BUK7K6R2-40E, BUK7K6R8-40E, IRF530, BUK7Y113-100E, BUK7Y12-100E, BUK7Y12-40E, BUK7Y14-80E, BUK7Y15-100E, BUK7Y153-100E, BUK7Y15-60E, BUK7Y19-100E
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