BUK7Y12-100E PDF and Equivalents Search

 

BUK7Y12-100E Specs and Replacement

Type Designator: BUK7Y12-100E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 349 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: LFPAK56 POWER-SO8

BUK7Y12-100E substitution

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BUK7Y12-100E datasheet

 ..1. Size:295K  nxp
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BUK7Y12-100E

BUK7Y12-100E N-channel 100 V, 12 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

 6.1. Size:790K  nxp
buk7y12-55b.pdf pdf_icon

BUK7Y12-100E

BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

 6.2. Size:312K  nxp
buk7y12-40e.pdf pdf_icon

BUK7Y12-100E

BUK7Y12-40E N-channel 40 V, 12 m standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

 8.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y12-100E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

Detailed specifications: BUK7K35-60E, BUK7K52-60E, BUK7K5R1-30E, BUK7K5R6-30E, BUK7K6R2-40E, BUK7K6R8-40E, BUK7K8R7-40E, BUK7Y113-100E, NCEP15T14, BUK7Y12-40E, BUK7Y14-80E, BUK7Y15-100E, BUK7Y153-100E, BUK7Y15-60E, BUK7Y19-100E, BUK7Y21-40E, BUK7Y22-100E

Keywords - BUK7Y12-100E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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