BUK7Y22-100E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7Y22-100E
Marking Code: 72210E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 49 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: LFPAK56 POWER-SO8
BUK7Y22-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7Y22-100E Datasheet (PDF)
buk7y22-100e.pdf
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buk7y25-80e.pdf
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buk7y28-75b.pdf
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buk7y20-30b.pdf
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buk7y29-40e.pdf
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buk7y21-40e.pdf
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buk7y2r0-40h.pdf
BUK7Y2R0-40HN-channel 40 V, 2.0 m standard level MOSFET in LFPAK569 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Feat
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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