All MOSFET. BUK7Y41-80E Datasheet

 

BUK7Y41-80E Datasheet and Replacement


   Type Designator: BUK7Y41-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK7Y41-80E Datasheet (PDF)

 ..1. Size:345K  nxp
buk7y41-80e.pdf pdf_icon

BUK7Y41-80E

BUK7Y41-80EN-channel 80 V, 41 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

 8.1. Size:294K  nxp
buk7y4r4-40e.pdf pdf_icon

BUK7Y41-80E

BUK7Y4R4-40EN-channel 40 V, 4.4 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

 8.2. Size:295K  nxp
buk7y43-60e.pdf pdf_icon

BUK7Y41-80E

BUK7Y43-60EN-channel 60 V, 43 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

 8.3. Size:296K  nxp
buk7y4r8-60e.pdf pdf_icon

BUK7Y41-80E

BUK7Y4R8-60EN-channel 60 V, 4.8 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

Datasheet: BUK7Y19-100E , BUK7Y21-40E , BUK7Y22-100E , BUK7Y25-60E , BUK7Y25-80E , BUK7Y29-40E , BUK7Y38-100E , BUK7Y3R5-40E , IRFZ46N , BUK7Y43-60E , BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E .

History: IPW60R299CP

Keywords - BUK7Y41-80E MOSFET datasheet

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